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Published Date: 2015-05-22Number of Pages: 155

GaN Industrial Devices Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021

Gallium Nitride (GaN) has a wide band gap and owing to its advanced features such as high breakdown voltage, high switching frequencies, enhanced power efficiency, high conduction and thermal stability, GaN is largely being preferred for numerous applications. These characteristics have enabled GaN power semiconductors to penetrate into various high power applications such as inverters for home appliances, inverters for trains, broadband wireless networks systems, power converter circuits, turbines, industrial and heavy electrical systems, and electric and hybrid vehicles. 

GaN technology is set to replace the silicon technology because of its superior characteristics and increasing applications as compared to silicon. The properties of GaN allow its discretes such as FETs, HEMTs, Schottky diodes and other advanced power devices to operate at higher voltages efficiently. GaN industrial devices market is expected to progress in the coming years, with the penetration in the medium voltage power electronics market. The majority of the revenue in GaN industrial devices market is coming from the ICT sector because of increasing replacements of Si based devices with GaN. In addition, various RF devices used for communication applications are all being transformed to GaN based technology from Si technology.

GaN industrial devices are widely used in industrial systems, power distribution systems, turbines, heavy electrical systems, heavy machinery, electro-mechanical computing systems and advanced industrial control systems. In addition, new power applications (clean-tech) such as Smart Grid Power Systems, High-Voltage Direct Current (HVDC), Wind Turbines, Solar Power Systems and Wind Power Systems. GaN’s low sensitivity to ionizing radiation and better stability allows its use in satellites, solar cell arrays, and high end power equipments in military and aerospace sector. GaN industrial devices also find application in automobile sector; in the manufacturing of hybrid and electric vehicles. 

The global GaN HEMT market by application is classified into wireless phone infrastructure: base stations (BTS), WiMAX/LTE, V-SAT, CATV, defense, satellite and others. By revenue, wireless phone infrastructure: base stations (BTS) segment held the largest share in 2014 and accounted for 26.0% of the market. The major reason is attributed to increasing utilization of GaN HEMTs in cellular base stations and other wireless systems.

By types, the global GaN industrial devices market is bifurcated into two segments: opto electronics and power devices. By revenue, opto electronics was the largest contributor to the market in 2014. The major reason is attributed to due increasing demand for light emitting and laser diodes in automotive, transportation, consumer electronics and medical sectors

By application, the global GaN industrial devices market is subdivided into three sub-segments: light emitting diodes (LEDs), radio frequency (RF), and power devices. LED segment held the largest market share, both in terms of volume and value in 2014 The major reason is attributed to wide implementation of GaN based LED devices in liquid crystal displays, traffic signal lamps, and vehicle lamps among others. Moreover, with advancement of the GaN technology, high brightness blue LEDs are being developed by single phase growth of GaN and InGaN, conductivity control of p-type GaN along with epitaxial layer structures of LEDs and laser diodes. Recently, bulk GaN based substrate based LED devices, including non-polar and semi-polar LEDs, were developed. These are also known as second generation LEDs, as they offer different performance characteristics. Such devices are able to perform at high current densities with high efficiency.

The global GaN industrial devices market is classified into four broad regions: North America, Europe, Asia Pacific and RoW. In terms of value, North America held the largest share in 2014, and accounted for approximately 31% of the global market. This is mainly due to wide usage of GaN based devices for high frequency satellite communications coupled with increasing utilization of high performance GaN based transistors in military and defense applications in this region. The penetration of GaN based industrial devices in North America is further bolstered by rising demand for LEDs in mobile tablets, computers, laptops, televisions and gaming devices among others.

Major market participants profiled in this report include Fujitsu Limited (Japan), GaN Systems Inc (Canada), Freescale Semiconductors Incorporated (U.S.), International Rectifier Corporation (U.S.), and RF Micro Devices Inc. (U.S.), Efficient Power Conversion Corporation (U.S.), NXP Semiconductors N.V. (Netherlands), Renesas Electronics Corporation (Japan), Toshiba Corporation (Japan), Texas Instruments Inc. (U.S.), International Quantum Epitaxy (U.K.), Nichia Corporation (Japan) and Cree Inc., (U.S.).

 

Chapter 1 Preface

1.1 Report description

1.2 Research scope

1.3 Research methodology

 

Chapter 2 Executive Summary

 

CHAPTER 3 Global GaN Industrial Devices Market Overview

3.1 Introduction

3.2 Market Evolution

3.3 Market drivers

      3.3.1 Supply side drivers 

              3.3.1.1 Introduction of advanced technology and large scale production

      3.3.2 Demand side drivers

              3.3.2.1 Increasing application areas for GaN based devices

              3.3.2.2 Growing demand for enhanced battlefield performance from defense sector

      3.3.3 Economic drivers

              3.3.3.1 Growing economy in developing countries

      3.3.4 Impact analysis of drivers

      3.3.5 Restraints

              3.3.5.1 High cost of pure Gallium Nitride

      3.3.6 Opportunities

              3.3.6.1 Powering the next-generation Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)

3.4 Market Attractiveness Analysis for Global GaN Industrial Devices Market

Recommendations

3.5 Global GaN RF Devices Market: Supply Chain Analysis

      3.5.1 Overview

              3.5.1.1 Raw Material Acquisition

              3.5.1.2 Wafer Coating and Manufacturing

              3.5.1.3 Device Fabrication

              3.5.1.4 Etching and Doping

              3.5.1.5 Cutting and Mounting

              3.5.1.6 Assembly, Packaging and Testing

      3.5.2 Companies Forming An Integral Part In The Global Supply Chain of RF Devices Market

              3.5.2.1 North America

              3.5.2.2 Europe

              3.5.2.3 APAC

              3.5.2.4 Rest of the World

3.6 Global GaN RF Devices Market: Foundries

      3.6.1 North America

      3.6.2 Europe

      3.6.3 APAC

      3.6.4 Rest of the World

3.7 Global GaN Industrial Devices Market: Mergers and acquisitions

3.8 Global GaN RF Devices Market: Recent funding activities

3.9 Competitive landscape

      3.9.1 Market positioning of key players, 2014

 

Chapter 4 Global GaN RF Market Analysis: High Electron Mobility Transistor (HEMT)

4.1 Introduction

4.2 GaN versus Silicon FET

4.3 Microwave frequency bands comparison (Si, SiGe, GaAs and others)

4.4 High-power industry transistors comparison (GaN, Si and Sic)

4.5 Existing product portfolio for power industry GaN devices

4.6 Cost analysis HEMT process GaN/SiC

4.7 Global HEMT market revenue, 2014 – 2021 (USD million)

      4.7.1 Revenue forecast, 2014 – 2021 (USD Mn)

              4.7.1.1 4 inch revenue forecast, 2014 – 2021 (USD Mn)

              4.7.1.2 Others

              4.7.1.3 Others revenue forecast, 2014 – 2021 (USD Mn)

4.8 Epitaxy techniques

      4.8.1 Growth potential

4.9 Semi-insulating GaN substrates

      4.9.1 Manufacturers

 

Chapter 5 Global GaN HEMT Market Revenue: By Application, 2014 – 2021 (USD Mn)

5.1 Overview

      5.1.1 Global GaN HEMT Market Revenue, By Application, 2014 – 2021 (USD million)

5.2 WiMAX/LTE market

      5.2.1 WiMAX/LTE market revenue and forecast, 2014 – 2021 (USD million)

5.3 Wireless phone infrastructure: Base stations (BTS) market

      5.3.1 Wireless phone infrastructure: base stations (BTS) market revenue and forecast, 2014 – 2021 (USD million)

5.4 CATV market

      5.4.1 CATV market revenue and forecast, 2014 – 2021 (USD million)

5.5 V-SAT market

      5.5.1 V-SAT market revenue and forecast, 2014 – 2021 (USD million)

5.6 Satellite market

      5.6.1 Satellite market revenue and forecast, 2014 – 2021 (USD million)

5.7 Defense market

      5.7.1 Defense market revenue and forecast, 2014 – 2021 (USD million)

5.8 Others (>10% share)

      5.8.1 Others (industrial, power, solar and wind sectors) market revenue and forecast, 2014 – 2021 (USD million)

 

Chapter 6 Maturity of GaN Technology

6.1 Radio frequency (RF)

      6.1.1 Field failure rate

      6.1.2 Reliability issue

      6.1.3 Development trend

6.2 Light-emitting diode (LED)

      6.2.1 Field failure rate

      6.2.2 Reliability issue

      6.2.3 Development trend

6.3 Power devices

      6.3.1 Field failure rate

      6.3.2 Reliability issues

      6.3.3 Development trend

 

Chapter 7 Gallium Nitride (GaN) Industrial Devices Market Revenue, By Types, 2014 – 2021 (USD Mn)

7.1 Introduction

7.2 Power devices

      7.2.1 Global power devices market revenue and forecast, by types 2014 – 2021 (USD million)

      7.2.2 Schottky diode

      7.2.3 Metal oxide semiconductor field effect transistor (MOSFETs)

      7.2.4 High electron mobility transistors (HEMTs)

      7.2.5 Others (rectifiers, other advanced transistor types)

7.3 Opto electronics

      7.3.1 Global GaN opto electronics market revenue and forecast, by types, 2014 - 2021 (USD million)

      7.3.2 Light emitting diodes

      7.3.3 Laser diodes

 

Chapter 8 Global GaN Industrial Devices Market Revenue and Shipment Volume, by Applications, 2014 – 2021 (USD Mn and Million Units)

8.1 Overview

8.2 Radio frequency (RF)

      8.2.1 Technology roadmaps

      8.2.2 Technology Roadmap RF

      8.2.3 Major Players

      8.2.4 Resources distribution

      8.2.5 Revenue and Shipment Volume, 2010 – 2021 (USD Mn and Million Units)

8.3 Light-emitting diode (LED)

      8.3.1 Technology roadmaps

      8.3.2 Technology Roadmap LED

      8.3.3 Major Players

      8.3.4 Resources distribution

      8.3.5 Revenue and Shipment Volume, 2010 – 2021 (USD Mn and Million Units)

8.4 Power device

      8.4.1 Technology roadmaps

      8.4.2 Technology Roadmap Power Device

      8.4.3 Major Players

      8.4.4 Resources distribution

      8.4.5 Revenue and Shipment Volume, 2010 – 2021 (USD Mn and Million Units)

 

Chapter 9 Global GaN Industrial Devices Market Revenue, By Geography, 2014 – 2021 (USD Million)

9.1 Overview

      9.1.1 Global GaN industrial devices market revenue share, 2014 and 2021 (%)

      9.2.1 North America GaN industrial devices market revenue, and forecast, 2014 – 2021 (USD million)

              9.2.2.1 U.S. GaN industrial devices market revenue, and forecast, 2014 – 2021 (USD million)

              9.2.3.1 Canada GaN industrial devices market revenue, and forecast, 2014 – 2021 (USD million)

              9.2.4.1 Others GaN industrial devices market revenue, and forecast, 2014 – 2021 (USD million)

9.3 Europe GaN industrial devices market

      9.3.1 Europe GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.3.2.1 Germany GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.3.3.1 UK GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.3.4.1 Italy GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.3.5.1 France GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.3.6.1 ROE GaN industrial device market size and forecast, 2014 – 2021 (USD million)

9.4 Asia Pacific GaN industrial devices market

      9.4.1 Asia Pacific GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

      9.4.2 APEJ GaN industrial devices market

              9.4.2.1 APEJ GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

              9.4.2.2 China GaN industrial devices market

                        9.4.2.2.1 China GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

              9.4.2.3 India GaN industrial devices market

                        9.4.2.3.1 India GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

              9.4.2.4 Rest of APEJ GaN industrial devices market

                        9.4.2.4.1 Rest of APEJ GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

      9.4.3 Japan GaN industrial devices market

             9.4.3.1 Japan GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

9.5 Middle East and Africa (MEA) GaN industrial devices market

      9.5.1 Middle East and Africa (MEA) GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

      9.5.2 Saudi Arabia GaN industrial devices market

              9.5.2.1 Saudi Arabia GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

      9.5.3 South Africa industrial devices market

              9.5.3.1 South Africa GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

      9.5.4 Others GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

9.6 Latin America GaN industrial devices market

      9.6.1 Latin America GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.6.2.1 Brazil GaN industrial device market size and forecast, 2014 – 2021 (USD million)

              9.6.3.1 Others GaN industrial device market size and forecast, 2014 – 2021 (USD million)

 

Chapter 10 Company Profiles

10.1 Fujitsu Limited

      10.1.1 Company overview

      10.1.2 Financial overview

      10.1.3 Business strategies

      10.1.4 Recent developments

10.2 GaN Systems Inc.

      10.2.1 Company overview

      10.2.2 Financial overview

      10.2.3 Business strategies

      10.2.4 Recent developments

10.3 Freescale Semiconductor Inc.

      10.3.1 Company overview

      10.3.2 Financial overview

      10.3.3 Business strategies

      10.3.4 Recent developments

10.4 Efficient Power Conversion Corporation

      10.4.1 Company overview

      10.4.2 Financial overview

      10.4.3 Business strategies

      10.4.4 Recent developments

10.5 International Rectifier

      10.5.1 Company overview

      10.5.2 Financial overview

      10.5.3 Business strategies

      10.5.4 Recent developments

10.6 NXP Semiconductors N.V.

      10.6.1 Company overview

      10.6.2 Financial overview

      10.6.3 Business strategies

      10.6.4 Recent developments

10.7 Renesas Electronics Corporation

      10.7.1 Company overview

      10.7.2 Financial overview

      10.7.3 Business strategies

      10.7.4 Recent developments

10.8 Toshiba Corporation

      10.8.1 Company overview

      10.8.2 Financial overview

      10.8.3 Business strategies

      10.8.4 Recent developments

10.9 Texas Instruments Inc.

      10.9.1 Company overview

      10.9.2 Financial overview

      10.9.3 Business strategies

      10.9.4 Recent developments

10.10 International Quantum Epitaxy plc

      10.10.1 Company overview

      10.10.2 Financial overview

      10.10.3 Business strategies

      10.10.4 Recent developments

10.11 Nichia Corporation

      10.11.1 Company overview

      10.11.2 Financial overview

      10.11.3 Business strategies

      10.11.4 Recent developments

10.12 Cree Inc.

      10.12.1 Company overview

      10.12.2 Financial overview

      10.12.3 Business strategies

      10.12.4 Recent developments

10.13 RF Micro Devices Inc.

      10.13.1 Company overview

      10.13.2 Financial overview

      10.13.3 Business strategies

      10.13.4 Recent developments

List of Figures 

 

FIG. 1 Market segmentation: Global GaN Industrial Devices Market

FIG. 2 Market Attractiveness Analysis, By Application, 2014

FIG. 3 Global GaN RF Devices Market: Supply Chain Analysis

FIG. 4 Global GaN industrial devices market positioning of key players, 2014 (Value %)

FIG. 5 Mechanism of Gallium Nitride High Electron Mobility Transistor (GaN HEMT)

FIG. 6 Global HEMT market revenue, 2014 – 2021 (USD million)

FIG. 7 4 inch revenue forecast, 2014 – 2021 (USD Mn)

FIG. 8 Others revenue forecast, 2014 – 2021 (USD Mn)

FIG. 9 Global GaN HEMT Market Revenue, By Application, 2014 – 2021 (USD million)

FIG. 10 WiMAX/LTE market revenue and forecast, 2014 – 2021 (USD million)

FIG. 11 Wireless phone infrastructure : base stations (BTS) market revenue and forecast, 2014 – 2021 (USD million)

FIG. 12 CATV market revenue and forecast, 2014 – 2021 (USD million)

FIG. 13 V-SAT market revenue and forecast, 2014 – 2021 (USD million)

FIG. 14 Satellite market revenue and forecast, 2014 – 2021 (USD million)

FIG. 15 Defense market revenue and forecast, 2014 – 2021 (USD million)

FIG. 16 Others (industrial, power, solar and wind sectors) market revenue and forecast, 2014 – 2021 (USD million)

FIG. 17 Field failure mechanisms in GaN based RF devices

FIG. 18 Global GaN industrial devices market revenue share, by types, 2014 and 2021 (%)

FIG. 19 Global GaN power devices market revenue and forecast 2014 - 2021 (USD million)

FIG. 20 Global GaN opto electronics market revenue and forecast 2014 - 2021 (USD million)

FIG. 21 Global GaN industrial devices market revenue share, by applications, 2014 and 2021 (%)

FIG. 22 Global GaN industrial devices market volume share, by applications, 2014 and 2021 (%)

FIG. 23 Technology Roadmap RF

FIG. 24 RF Global GaN Industrial Devices market revenue, volume and forecast, 2010 – 2021 (USD million and million units)

FIG. 25 Technology Roadmap LED

FIG. 26 LED Global GaN Industrial Devices market revenue, volume and forecast, 2010 – 2021 (USD million and million units)

FIG. 27 Technology Roadmap Power Device

FIG. 28 Power Device Global GaN Industrial Devices market revenue, volume and forecast, 2010 – 2021 (USD million and million units)

FIG. 29 Global GaN industrial devices market revenue share, 2014 and 2021 (%)

FIG. 30 North America GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 31 U.S. GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 32 Canada GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 33 Others GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 34 Europe GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 35 Germany GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 36 UK GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 37 Italy GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 38 France GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 39 ROE GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 40 Asia Pacific GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 41 APEJ GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 42 China GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 43 India GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 44 Rest of APEJ GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 45 Japan GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 46 Middle East and Africa (MEA) GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 47 Saudi Arabia GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 48 South Africa GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 49 Others GaN industrial devices market revenue and forecast, 2014 – 2021 (USD million)

FIG. 50 Latin America GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 51 Brazil GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 52 Others GaN industrial device market size and forecast, 2014 – 2021 (USD million)

FIG. 53 Fujitsu Limited annual revenue, 2012 – 2014 (USD billion)

FIG. 54 Freescale Semiconductor Inc annual revenue, 2012 – 2014 (USD billion)

FIG. 55 NXP Semiconductors N.V. annual revenue, 2012 – 2014 (USD billion)

FIG. 56 Renesas Electronics Corporation annual revenue, 2011 – 2013 (USD billion)

FIG. 57 Toshiba Corporation annual revenue, 2011 – 2013 (USD billion)

FIG. 58 Texas Instruments Inc annual revenue, 2012 – 2014 (USD billion)

FIG. 59 International Quantum Epitaxy plc annual revenue, 2012 – 2014 (USD billion)

FIG. 60 Cree Inc. annual revenue, 2011 – 2013 (USD billion)

FIG. 61 RF Micro Devices Inc. annual revenue, 2011 – 2013 (USD billion)

List of Tables

 

TABLE 1 Global GaN Industrial Devices Market Snapshot

TABLE 2 Impact analysis of drivers

TABLE 3 Impact analysis of drivers

TABLE 4 Impact analysis of drivers

TABLE 5 Comparison of Physical Properties of Semiconductors

TABLE 6 Comparison of Material Properties

TABLE 7 Global power devices market revenue and forecast, by types 2014 – 2021 (USD million)

TABLE 8 Global GaN opto electronics market revenue and forecast, by types, 2014 - 2021 (USD million)

 

The report provides a strategic analysis of the global GaN industrial devices market. The global GaN industrial devices market has been segmented on the basis of types, applications and geography. Furthermore, GaN HEMT (High Electron Mobility Transistor) has been bifurcated on the basis of their application areas. The cross sectional analysis of global GaN industrial devices market across the five major geographical segments has also been covered under the purview of this report. Increasing application of GaN based industrial devices in various areas such as automotive, defense, information and communication technology, military, aerospace and power distribution systems is primarily driving the growth of the market. GaN is being widely implemented in radio frequency (RF) devices, light-emitting diodes (LEDs) and power electronics, owing to its ability to operate at high frequency, power density and high temperature.

 

Moreover, increasing demand from defense sector for enhanced battlefield performance has consequently accelerated the demand for GaN industrial devices. The major application of GaN in military is its usage in HEMT (High Electron Mobility Transistor), which is essential for high frequency operations. Another factor fuelling the growth of the global GaN industrial devices market is the introduction of advanced technology and large scale production of GaN. Due to rapid improvement in GaN technology, many companies are coming up with new innovative products that are cost-effective and have better design and performance. The conjoint effect of all these drivers and trends is thus set to bolster the growth of the global GaN industrial devices market during the forecast period from 2015-2021.

 

GaN has found a strong foothold in various applications of power electronics such as security systems, cruise control, inverters, auxiliary power, battery management and voltage converters, due to the rapid development in material processing technologies. Gallium nitride promises to revolutionize the electronics industry and serve as an attractive replacement for silicon devices for applications in the field of electro-mobility and photovoltaic. Developments in improving the breakdown voltage of GaN based devices are indicating the future for the next generation hybrid electric vehicles (HEVs). However, the production cost of pure Gallium nitride is significantly higher compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. This could be one of the major challenges in the commercialization of pure GaN based devices.

 

The competitive profiling of the key players in the market and their market share across the five geographic segments namely, North America, Europe, Asia Pacific, Middle East and Africa and Latin America have been covered under the scope of the report. Moreover, the different business strategies that have been adopted by the leading players have been covered in this report. The market attractiveness analysis and supply chain analysis have been included in the report in order to provide an insight into the market dynamics.

 

An exhaustive analysis of the market dynamics namely, the market drivers, restraints and opportunities has been also included under the purview of the report. Market dynamics are the factors that impact the growth of the market and thus help to understand the current trends in the market. Thus, the report provides a detailed analysis of the global GaN industrial devices market and also offers the forecast from 2015 to 2021. 

 

Some of the key players in the GaN industrial devices market are, Fujitsu Limited (Tokyo, Japan), GaN Systems Inc (Canada, US), Freescale Semiconductor Inc (Texas, US), Efficient Power Conversion Corporation (California, US), International Rectifier (California, US), NXP Semiconductors N.V. (Netherlands), Renesas Electronics Corporation (Tokyo, Japan), Toshiba Corporation (Tokyo, Japan), Texas Instruments Inc. (Texas, US), International Quantum Epitaxy plc (United Kingdom), Nichia Corporation (Tokushima, Japan), Cree Inc (North Carolina, US) and RF Micro Devices (North Carolina, US) among others.

 

The global GaN industrial devices market has been segmented into:

 

GaN HEMT market, by Application

  • WiMAX/LTE market
  • Wireless phone infrastructure: Base stations (BTS) market
  • CATV market
  • V-SAT market
  • Satellite market
  • Defense market
  • Others

GaN industrial devices market, by Types:

  • Power devices
    • Schottky diode
    • Metal oxide semiconductor field effect transistor (MOSFETs)
    • High electron mobility transistors (HEMTs)
    • Others (rectifiers, other advanced transistor types)
  • Opto electronics
    • Light-emitting diodes
    • Laser diodes

GaN industrial devices market, by Application

  • Radio frequency (RF)
  • Light-emitting diodes (LED)
  • Power device

GaN industrial devices market, by geography: The market is broadly segmented on the basis of geography into:

  • North America
    • United States
    • Canada
    • Others)
  • Europe

    • Germany
    • United Kingdom
    • Italy
    • France
    • Rest of Europe
  • Asia Pacific

    • APEJ

      • China
      • India
      • Rest of APEJ
    • Japan
  • Middle East and Africa (MEA)

    • Saudi Arabia
    • South Africa
    • Others
  • Latin America

    • Brazil
    • Others


 
 
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