GaN on Diamond Semiconductor Substrates Market - Snapshot

GaN (Gallium Nitride) on diamond is an alternative material to pure GaN in the field of high power semiconductors and electronics. There are immense opportunities for new product innovation and development in GaN on diamond based semiconductor products in the near future. This is mainly due to GaN on diamond semiconductor substrates offering different advantages such as high thermal conductivity, superior high frequency handle capacity, and high energy efficiency & flexibility, which is anticipated to drive the market in the coming years. Increasing demand for RF power applications across aerospace & defense, high power electronics, and research & development has led to adoption of GaN on diamond semiconductor substrates globally. The high thermal conductivity, high frequency handling capacity, and high energy efficiency and flexibility makes its suitable for manufacturing semiconductor devices. The market for GaN on diamond semiconductor substrates is forecast to quickly grow to US$ 19,162.4 Thousand by 2026 from US$ 7,777.0 Thousand in 2017, recording a CAGR of 11.2%.

gan on diamond semiconductor substrates market

The GaN on diamond semiconductor substrates market has seen demand traction due to rising demand for modern electronic wafers as well as increase in adoption of GaN on diamond semiconductor substrates in high power electronics applications. Increasing demand for technologically advanced electronic wafers along with rising investment by various semiconductor manufacturers to build advanced electronic wafers in order to cope with the rising demand is the most significant factor anticipated to accelerate the GaN on diamond semiconductor substrate market. GaN on diamond also enables better utilization of various electromagnetic spectrum, thereby improving the performance of military and defense cellular handsets, and satellite and wireless technologies among others.

Increasing demand for GaN on diamond semiconductor substrates based devices across various end-use application sectors such as aerospace & defense, and research & development is predicted to boost the demand for this product.

GaN on diamond based RF power-amplifiers can be used in various defense and military applications in future due to lower cooling complexity of high power electronic devices. Moreover, the excellent chemical properties of GaN on diamond semiconductor substrate materials including high electron saturation drift velocity, wide band gap, and high thermal conductivity makes it highly appropriate for the development of high-power microwave, and high-frequency and millimeter-wave and circuit for different wireless communication applications. GaN on diamond semiconductor substrates offer numerous benefits such as longer lifespan and higher power resist capability to communication satellite equipment manufacturers. Despite huge benefits associated with GaN on diamond based semiconductor substrate, the existing high market share of silicon based and GaN based substrate along with the prevailing low price as compared to diamond is one of the factors that has been hindering the demand for GaN on diamond based semiconductor substrates across various mainstream electronic applications.

GaN on diamond is being adopted in various high power applications of military and defense due to rapid development in material processing technologies. The intrinsic properties of diamond make it the most suitable choice for aerospace and defense product manufacturers. Increasing application areas of various electronic devices and circuits across different end-use industries is one of the major reasons for the rise in demand for GaN on diamond semiconductor substrates.

The global GaN on diamond semiconductor substrates market is highly consolidated with limited number of companies operating in the market. Leading players are currently focusing on providing technologically enhanced products to customers. Increasing demand for GaN on diamond based devices coupled with decreasing cost in the long run is expected to encourage various investors to invest in this new technology. Moreover, as part of this strategy, companies are engaging in various strategic partnerships, acquisitions, and focusing on expanding their business through new service additions and geographical presence.

Some of the prominent players identified in the GaN on diamond semiconductor substrates market and profiled in the study include Blue Wave Semiconductor Inc., Element Six, Microwave Enterprises Ltd., Cornes Technologies Ltd., Advanced Diamond Technologies, IIa Technologies Pte. Ltd., NeoCoat SA, Crystallume, Carat Systems, Qorvo Inc., RFHIC Corporation, Diamond Microwave Devices Limited, and Akash Systems Inc.

GaN on Diamond Semiconductor Substrates Market: Overview

This comprehensive report by Transparency Market Research analyzes and forecasts the GaN on diamond semiconductor substrates market at the global and regional level. The report provides analysis over the period 2016–2026, wherein 2018 to 2026 is the forecast period and the base year is 2017. An in-depth and unbiased market assessment has been made to offer readers in-depth and accurate analysis. The report emphasizes on all the major trends and services playing a key role in the growth of the GaN on diamond semiconductor substrates market during 2018- 2026. It also focuses on market drivers, restraining factors, and opportunities of the GaN on diamond semiconductor substrates market during the said period. The study provides a complete perspective about the GaN on diamond semiconductor substrates market’s growth throughout the research study in terms of value (in US$ thousand and Units) across various geographies, including Asia Pacific, South America, North America, Middle East & Africa (MEA), and Europe.

The report includes a detailed value chain analysis, which is focused on providing an extensive view of the global GaN on diamond semiconductor substrates market. Porter’s Five Forces analysis is also provided to understand the competitive scenario in the global GaN on diamond semiconductor substrates market. The study incorporates a market attractiveness analysis, wherein the market segments, for instance, diamond type, application, and end-use industry are benchmarked based on their market size, growth rate, and attractiveness in terms of opportunity. In order to give a complete analysis of the overall competitive scenario in the GaN on diamond semiconductor substrates market, every geographic region mentioned in the report is provided with attractiveness analysis.

A market overview chapter in the GaN on diamond semiconductor substrates market report explains the market trends and dynamics which include the market drivers, restraining factors, and opportunities for the current and future GaN on diamond semiconductor substrates market. A market outlook analysis has been provided globally in the report. Additionally, the report also provides analysis of different business strategies being adopted by market leaders of the GaN on diamond semiconductor substrates market. Market introduction chapter assists in gaining an idea of different trends and services related to GaN on diamond semiconductor substrates along with their types, end-use industry, and applications.

Global GaN on Diamond Semiconductor Substrates Market: Scope of the Report

The study provides a decisive view on the global GaN on diamond semiconductor substrates market, by segmenting the market on the basis of diamond type into single crystal diamond and polycrystalline diamond. Based on application, the market has been bifurcated into various types that include RF power amplifier, microwave & millimeter wave circuits, radar sensing equipment, tactical radios, communications satellite equipment, wireless infrastructure, and others. By end-use industry, the market has been classified into aerospace & defense, high power electronics, research & development, and others. The report provides a detailed breakdown of the GaN on diamond semiconductor substrates market region-wise and categorizes it at various levels, thus providing valuable insights at micro and macro levels.

The report highlights the competitive scenario within the GaN on diamond semiconductor substrates market, thus ranking all the major players according to thekey recent developments and their geographic presence. The insights for the GaN on diamond semiconductor substrates market are the result of our extensive primary interviews, secondary research, and in-house expert panel reviews. These market estimates have been analyzed by considering the impact of different economic, political, social, legal, and technological factors.

Based on country, the North America market is bifurcated into Canada, the U.S., and Rest of North America. The Europe market is analyzed across France, Germany, U.K., and Rest of Europe. The APAC GaN on diamond semiconductor substrates market is also segmented at country level which includes China, Japan, India, South Korea, and Rest of Asia Pacific. Middle East & Africa region covers the G.C.C. countries, Israel, and Rest of Middle East & Africa. Similarly, South America region includes Brazil and Rest of South America. This report provides all the strategic information required to understand the GaN on diamond semiconductor substrates market along with its types and end-use industry. Also, the report provides insights related to the applications and different end-users according to the various geographical regions mentioned above.

Global GaN on Diamond Semiconductor Substrates Market: Research Methodology

The research methodology is a perfect combination of primary research, secondary research and expert panel reviews. Secondary sources such as annual reports, company websites, SEC filings and investor presentations, national government documents, internal and external proprietary databases, statistical databases, relevant patent and regulatory databases, market reports, government publications, statistical databases, World Bank database, and industry white papers are usuallyreferred.

Primary research involves telephonic interviews, e-mail interactions, and face-to-face interviews for detailed and unbiased reviews on the GaN on diamond semiconductor substrates market,across geographies. Primary interviews are usually conducted on an ongoing basis with industry expertsand participants in order to get latest market insights and validate the existing data and analysis. Primary interviews offernew and fresh information on important factors such as market trends, market size, competitive landscape, growth trends, etc. These factors help to validate and strengthen secondary research findings. Moreover, the data collected and analyzed from secondary and primary research is again discussed and examined by our expert panel.

Global GaN on Diamond Semiconductor Substrates Market: Competitive Dynamics

The research study includes profiles of leading companies operating in the global GaN on diamond semiconductor substrates market. Market players have been profiled in terms of attributes such as company overview, financial overview, business strategies, and recent developments. Parameters such as GaN on diamond semiconductor substrates investment & spending and developments by major players of the market are tracked. Some of the key players in the GaN on diamond semiconductor substrates market are Blue Wave Semiconductor Inc., Element Six, Microwave Enterprises Ltd., Cornes Technologies Ltd., Advanced Diamond Technologies, IIa Technologies Pte. Ltd., NeoCoat SA, Crystallume, Carat Systems, Qorvo Inc., RFHIC Corporation, Diamond Microwave Devices Limited, and Akash Systems Inc. among others.       .

The global GaN on diamond semiconductor substrates market has been segmented as follows:

Global GaN on Diamond Semiconductor Substrates Market

 By DiamondType

  • Single Crystal Diamond
  • Polycrystalline Diamond

 By Application

  • RF Power Amplifier
  • Microwave & Millimeter Wave Circuits
  • Radar Sensing Equipment
  • Tactical Radios
  • Communications Satellite Equipment
  • Wireless Infrastructure
  • Others

By End-use Industry

  • Aerospace & Defense
  • High Power Electronics
  • Research & Development
  • Others

By Geography

  • North America
    • U.S.
    • Canada
    • Rest of North America
  • Europe
    • Germany
    • France
    • U.K.
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Rest of Asia Pacific
  • Middle East & Africa
    • GCC Countries
    • Israel
    • Rest of Middle East & Africa
  • South America
    • Brazil
    • Rest of South America
.