+1-518-618-1030 866 - 552 - 3453 USA-Canada Toll Free
Published Date: 2017-08-10Number of Pages: 138

GaN Power Devices Market (Component - GaN Power Discrete Devices, GaN Power ICs, and GaN Power Modules; Industry Vertical - Consumer Electronics, IT and Telecommunications, Automotive, Aerospace and Defense) - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2017 - 2025

Global GaN Power Devices Market: Snapshot

Growing popularity of GaN power devices due to enhanced performance among industry applications and requirement of enhanced battlefield performance has driven the global GaN power devices market. The global GaN power devices market is anticipated to expand at a CAGR of 17.5% during the forecast period from 2017 to 2025. The global GaN power devices market was valued at US$223.50 mn in 2015 and is expected to rise to US$1.4 bn by 2025.

global gan power devices market

GaN Power Discrete Devices, Power Modules to Dominate Global GaN Power Devices Market

The GaN power devices market has been segmented on the basis of component, industry vertical, and region. On the basis of component, the market is segmented into GaN power discrete devices, GaN power ICs, and GaN power modules. The GaN power discrete devices segment is further sub-segmented into GaN power RF devices and GaN power non-RF devices. GaN power ICs are further classified into MMIC and hybrid.

In 2016, GaN power discrete devices accounted for a share of approximately 52.6% in the total revenue of the GaN power devices market. However, the GaN power modules segment is likely to account for 49.3% of the GaN power device market revenue by 2025. The GaN power modules segment is expected to show significant growth at a CAGR of 19.5% during the forecast period due to its performance benefits over silicon carbide (SiC) devices.

On the basis of industry vertical, the market is segmented into consumer electronics, IT and telecommunications, automotive, aerospace and defense, and others. Cost-effective design and enhanced performance is the major concern for these industry verticals. The consumer electronics segment leads the GaN power devices market with a total market share of 35.9% in 2016, followed by IT and telecommunication and aerospace and defense. However, with the increase in application areas of GaN power devices, the automotive industry is anticipated to show substantial growth, growing at a CAGR of 20.5% in the 2017-2025 forecast period.

North America’s Dominance in GaN Power Devices Market at Risk from APAC

Geographically, the global GaN power devices market is dominated by North America, which has emerged as the key regional segment thanks to the steady support for development of battery technology itself as well as several flourishing application segments of the GaN power devices industry, such as the electric vehicles market and the smartphones market. The North America GaN power devices market, valued at US$78.9 mn in 2015, is expected to rise to US$459.2 mn by 2025 at a 16.6% CAGR in the 2017-2025 forecast period. Nevertheless, Asia Pacific is likely to emerge as the dominant regional player in the global GaN power devices market in the coming years, with the regional market expected to exhibit a 19.9% CAGR between 2017 and 2025. The market’s revenue, valued at US$66.6 mn in 2015, is expected to rise to close to US$520 mn by 2025.

Global GaN Power Devices Market: Competitive Dynamics

The global GaN power devices market comprises large as well as mid-level vendors, including Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc., Texas Instruments, and Infineon Technologies AG. These companies have been able to establish a strong presence globally. Several vendors in the GaN power devices market are currently emphasizing on new product and process development to meet various demands of their customer base and to continuously improve the quality and reliability of their products. Moreover, vendors are adopting partnership and collaboration strategies to proficiently compete in multiple regional markets.

The market is expected to witness the entry of a significant number of vendors of GaN power devices in the coming years, intensifying the competition. Other significant players in the market include Fujitsu Limited, Transphorm Inc., Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, and Qorvo, Inc, among others.

GaN Power Devices Market: Overview

This report on the global GaN power devices market provides analysis for the period 2015–2025, wherein 2016 is the base year and the period from 2017 to 2025 is the forecast period. Data for 2015 has been included as historical information. The report covers market dynamics including drivers, restraints opportunities, and trends expected to influence the global GaN power devices market growth during the said period. Components that are playing a major role in driving the global GaN power devices market have also been covered in the report. The study provides a comprehensive analysis on market growth throughout the above mentioned forecast period in terms of revenue estimates (in US$ Mn), across different geographies. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors.

Global GaN Power Devices Market: Segmentation

The GaN power devices market has been segmented on the basis of component, industry vertical and region. On the basis of component, the market is segmented into GaN power discrete devices, GaN power IC's and GaN power modules. The GaN power discrete devices is further sub-segmented into GaN power RF devices and GaN power non-RF devices. Also, the GaN power ICs is further classified into MMIC and hybrid. In terms of industry vertical, the market is segmented into consumer electronics, IT & telecommunications, automotive, aerospace & defense, and others.

Global GaN Power Devices Market: Geographical Dynamics

Geographically, the report classifies the global GaN power devices market into North America, Europe, Asia Pacific, Middle East & Africa (MEA), and South America; the regions are analyzed in terms of revenue generation. Furthermore, the study also includes quantitative analysis of the competitive scenario for region wise prominent countries. These countries include the U.S, Canada, Germany, France, the U.K., Spain, China, India, Japan, GCC countries, South Africa, and Brazil. The market size and forecast for each region has been provided for the period from 2015 to 2025 along with the CAGR (%) for the forecast period from 2017 to 2025.

Global GaN Power Devices Market: Research Methodology

The report also includes key market indicators in the GaN power devices market. Porter’s five forces analysis is also included in the report. Value chain analysis which identifies the key participants in the GaN power devices is also covered in the report. The GaN power devices market report covers segment wise comparison matrix and market positioning analysis for all regions covered in the scope of our research. The report also includes market attractiveness analysis for all the segments and for all the regions in the scope of study which identifies and compares segments’ market attractiveness on the basis of CAGR and market share index.

Global GaN Power Devices Market: Competitive Dynamics

The report includes competition landscape which covers competition matrix, market positioning analysis of major players in the global GaN power devices market based on their 2016 revenues, profiling of major players (GaN power devices provider). Competition matrix benchmarks leading players on the basis of their capabilities and potential to grow. Factors including market position, offerings and R&D focus are included to explain the company’s capabilities. Factors including top line growth, market share, segment growth, infrastructure facilities and future outlook are attributed to company’s potential to grow. This section also identifies and includes various recent developments carried out by the leading players.

Company profiling includes company overview, major business strategies adopted, SWOT analysis and market revenues for past years. The key players in GaN Power Devices market include Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited, Transphorm Inc., Cree Incorporated (Wolfspeed), OSRAM Opto Semiconductors GmbH, and Qorvo, Inc, among others.

The global GaN power devices market is segmented as below:

Market Segmentation

GaN Power Devices Market, by Component

  • GaN Power Discrete Devices
    • GaN Power RF Devices
    • GaN Power Non-RF Devices
  • GaN Power IC’s
    • MMIC
    • Hybrid
  • GaN Power Modules

GaN Power Devices Market, Industry vertical

  • Consumer Electronics
  • IT & Telecommunications
  • Automotive
  • Aerospace & Defense
  • Others

GaN Power Devices Market, by Geography

  • North America
    • The U.S.
    • Canada
    • Rest of North America
  • Europe
    • The U.K.
    • Germany
    • France
    • Rest of Europe
  • Asia Pacific (APAC)
    • China
    • Japan
    • South Korea
    • Rest of APAC
  • Middle East and Africa (MEA)
    • GCC
    • South Africa
    • Rest of MEA
  • South America
    • Brazil
    • Argentina
    • Rest of South America


 
 
Back To Top