A featured report on the global focused ion beam market from Transparency Market Research offers a 360-degree view of the market. This report is titled, “Focused Ion Beam Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021”. According to this report, the global focused ion beam (FIB) market will progress at a 7.40% CAGR during the forecast period from 2015 to 2021. In 2014, the global focused ion beam market was worth US$2.82 bn and by 2021, the market is projected to be worth US$4.62 bn.
Browse the full Focused Ion Beam Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2015 - 2021 report at https://www.transparencymarketresearch.com/focused-ion-beam-market.html
The global focused ion beam (FIB) market is driven by the rising application of focused ion beam systems in the field of materials science. Focused ion beams are deployed in materials science both as a specimen preparation tool and microscope. The global focused ion beam market will also benefit from the growing demand for ion beam lithography and demand for failure analysis equipment around the world. On the other hand, the high cost associated with focused ion beam systems will suppress the global focused ion beam market.
On the basis of ion sources, the global focused ion beam (FIB) market is segmented into iridium, gold, gallium, and others. In 2014, the gallium segment was the largest contributor to the market in terms of revenue, followed by iridium. Presently, the majority of focused ion beam instruments are equipped with a liquid ion source emitting gallium ions. Currently, the gallium liquid-metal ion sources (LMIS) FIB technology is preferred over others due to its elevated stability, low melting point, and long source lifetime.
According to application, the global focused ion beam market is divided into failure analysis, materials science, nanofabrication, circuit edit, device modification, and others. Two major application areas of the global focused ion beam market are materials science and circuit editing.
By region, the global focused ion beam (FIB) market is classified into Europe, North America, Asia Pacific, the Middle East and Africa (MEA), and Latin America. In 2014, the global focused ion beam market was led by North America with a share of nearly 40%, followed by Asia Pacific. This regional market is driven by the surging demand for focused ion beam systems in the manufacturing industry and the semiconductor industry. One of the key factors driving this regional market is the surging demand for focused ion beam systems in the manufacturing industry and the semiconductor industry in North America. Focused ion beams in the semiconductor industry are used for failure analysis and detecting assembly and design errors.
The Asia Pacific market for focused ion beam (FIB) benefits from the increasing application of focused ion beams in the nano machining segment and the high concentration of semiconductor industries in China, Taiwan, India, Japan, and South Korea. In 2014, the Asia Pacific segment represented a 26.2% share in the global focused ion beam market, in terms of revenue.
Market opportunities presented by the advances in ion sources and the rising application of focused ion beams in the nano machining field will benefit companies operating in the global focused ion beam market. The top companies operating in the global focused ion beam (FIB) market are Evans Analytical Group, Fibics Incorporated, FEI, Carl Zeiss AG, and Hitachi High-Technologies Corporation.
The global focused ion beam market has been segmented into:
Focused ion beam market, by Ion Sources
Focused ion beam market, by Applications
- Circuit edit
- Device modification
- Materials science
- Failure analysis
Focused ion beam market, by Geography: The market is broadly segmented on the basis of geography into:
- North America
- United States
- United Kingdom
- Rest of Europe
- Asia Pacific
- Rest of Asia Pacific
- Latin America
- Rest of Latin America
- Middle East and Africa (MEA)
- Saudi Arabia
- South Africa
- Rest of MEA
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