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GaN on Diamond Semiconductor Substrates Market to Reach Valuation of US$ 142.05 Mn by 2031: Transparency Market Research

Electronics and Semiconductors |

GaN on Diamond Semiconductor Substrates Market: Introduction

Transparency Market Research delivers key insights on the global GaN on diamond semiconductor substrates market. In terms of revenue, the global GaN on diamond semiconductor substrates market is estimated to expand at a CAGR of 16.56% during the forecast period, owing to numerous factors, regarding which TMR offers thorough insights and forecasts in its report on the global GaN on diamond semiconductor substrates market.

The global GaN on diamond semiconductor substrates market is broadly affected by several factors, including rise in the demand for GaN on diamond based high electron mobility transistors (HEMTs).

GaN on Diamond Semiconductor Substrates Market: Dynamics

The power electronics industry has witnessed the theoretical limit reached by silicon MOSFETs and needs to move to a new element. GaN (Gallium Nitride) on diamond is an alternative material to pure GaN in the field of high power semiconductors and power electronics.

Gallium nitride is a kind of wide-gap compound semiconductor that has a high crystalline, good uniformity, and superior surface quality. GaN on diamond semiconductor substrate offers key parameters such as high thermal conductivity, high electrical resistivity, and three times smaller devices at both device and system level. These advantages make GaN on diamond power electronics devices highly attractive for high power RF applications, such as commercial base stations, military radar applications, satellite communication, and weather radars.

The increase in the demand for GaN on diamond based high electron mobility transistors (HEMTs) due to their properties such as reduction of the thermal resistance between the heat sources and diamond decreases the thermal constraints providing the device designer additional options to exploit the inherent characteristics. Additionally, HEMTs are atomically attached to a CVD diamond substrate. This technology has the feasibility of producing GaN-based devices on polycrystalline CVD diamond substrates to maximize heat extraction from devices that work at high power by situating the diamond substrates in the immediate proximity of the transistor. This is expected to fuel the demand for GaN on diamond semiconductor substrates across various GaN semiconductor devices such as HEMTs over the next few years.

GaN on Diamond Semiconductor Substrates Market: Prominent Regions

The GaN on diamond semiconductor substrates market in North America is expected to expand during the forecast period, owing to the presence of key market players, technological advancements, and expansion of the semiconductor and automotive sectors in the region. North America has the presence of robust expanding economies including the U.S., Canada, and Mexico. Industrial expansion coupled with the presence of a well-established supply chain network catering to a wide range of industries, including automotive, healthcare, defense, IT & telecommunication, aviation & aerospace, and heavy machinery manufacturing is expected to propel the demand for GaN on diamond semiconductor substrates; consequently, driving the global GaN on diamond semiconductor substrates market. The U.S. accounted for a prominent share, in terms of value, among all countries.

The GaN on diamond semiconductor substrates market in North America is projected to expand further due to a significant rise in the demand for power electronics and wireless infrastructure devices. The North America market is estimated to reach a value of US$ 80.90 Mn by 2031. The GaN on diamond semiconductor substrates market in Asia Pacific is likely to expand at a notable CAGR of 16.23% during the forecast period, owing to the presence of a significant number of players manufacturing GaN on diamond semiconductor substrates in the region.

GaN on Diamond Semiconductor Substrates Market: Key Players

Key players operating in the global GaN on diamond semiconductor substrates market are Blue Wave Semiconductor, Advanced Diamond Technologies, Carat Systems, Cornes Technologies Ltd., Crystallume, Diamond Microwave Devices Limited, Element Six, IIa Technologies Pte. Ltd., Microwave Enterprises Ltd., Neocoat SA, Qorvo Inc., and RFHIC Corporation.

Global GaN on Diamond Semiconductor Substrates Market: Segmentation

GaN on Diamond Semiconductor Substrates Market, by Diamond Type

  • Single Crystal Diamond
  • Polycrystalline Diamond

GaN on Diamond Semiconductor Substrates Market, by Application

  • RF Power Amplifier
  • Microwave & Millimeter Wave Circuits
  • Radar Sensing Equipment
  • Tactical Radios
  • Communications Satellite Equipment
  • Wireless Infrastructure
  • Others

GaN on Diamond Semiconductor Substrates Market, by End-use Industry

  • Aerospace & Defense
  • IT & Telecommunication
  • Research & Development
  • Others (Automotive, Healthcare, etc.)

GaN on Diamond Semiconductor Substrates Market, by Region

  • North America
    • U.S.
    • Canada
    • Mexico
  • Europe
    • U.K.
    • Germany
    • France
    • Italy
    • Russia
    • Rest of Europe
  • Asia Pacific (APAC)
    • China
    • India
    • Japan
    • South Korea
    • ASEAN
    • Rest of Asia Pacific
  • Middle East & Africa (MEA)
    • GCC Countries
    • South Africa
    • North Africa
    • Rest of Middle East & Africa
  • South America
    • Brazil
    • Argentina
    • Rest of South America

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Transparency Market Research is a global market intelligence company, providing global business information reports and services. Our exclusive blend of quantitative forecasting and trends analysis provides forward-looking insight for thousands of decision makers. Our experienced team of Analysts, Researchers, and Consultants, use proprietary data sources and various tools and techniques to gather, and analyze information.

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