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Globally, the combined market for IGBT (Insulated Gate Bipolar Transistor) and super junction MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) was valued at USD 4,776.2 million in 2012 and is likely to grow at a CAGR of 11.6% during the period 2013 – 2019. The combined market for IGBT and super junction MOSFET is expected to reach USD 10,100.0 million by 2019. Increasing demand for energy efficiency, environment compatibility, flexibility, and cost and size reduction are the emerging trends across the semiconductor industry and have greatly influenced the trends in power semiconductor market. IGBT and super junction MOSFETs offer significant improvement in efficiency and better switching frequency. Further, IGBT are cost effective while super junction MOSFETs offer highly compact design. These factors are together driving the growth of the market for IGBTs and super junction MOSFETs. Asia Pacific is expected to emerge as the fastest growing regional market, followed by Europe, during the forecast period 2013 to 2019. This growth in Asia Pacific region will be led by China followed by Japan. The growing renewable energy sector, heavy investment in high-speed rail and rising demand for electric vehicles are the key factors propelling growth of the IGBT and super junction MOSFET market in the region.



Both IGBT and super junction MOSFETs come in discrete as well as module forms. Growth of the discrete market is driven by increasing demand for consumer electronic products while modules have found significant uptake in photovoltaic inverters, and electric and hybrid electric vehicles (EV/HEV). Key application areas for IGBT and super junction MOSFETs include uninterrupted power supply (UPS), wind turbines, photovoltaic (PV) inverter, rail traction, consumer applications, electric vehicles/hybrid electric vehicles (EV/HEV), motor drives, industrial applications, converters, adapters and chargers, lighting, and others (servers, telecom and networking devices, etc.).. Super junction MOSFETs have been emerging as a more suitable power semiconductor for, converters, adapters and chargers, lighting, and other (servers, telecom and networking devices, etc.) application areas and are expected to find higher adoption in these segments as compared to IGBT over the coming years. Among all application segments for IGBT and super junction MOSFETs, industrial application was the single largest segment by revenue in 2012. The industrial application sector has seen high demand for energy efficient power semiconductor products in recent years and this has propelled the uptake of IGBT in this segment.


Key players in this market include Mitsubishi Electric Corporation, Fairchild Semiconductor International, Inc., Infineon Technologies AG, STMicroelectronics N.V., ABB Ltd., Hitachi Power Semiconductor Device, Ltd., Toshiba Corporation, Vishay Intertechnology, Inc., Fuji Electric Co. Ltd., and Semikron, Inc., among others. Mitsubishi Electric Corporation was as the market leader for IGBT in 2012. The company had significant sales in the Asian market, particularly in China and Japan. Infineon Technologies AG was the market leader in 2012 for super junction MOSFETs.

IGBT and Super Junction MOSFET Market to Gain Impetus Owing to Rising Demand from Automobile Industry

The growing demand for eco-friendly, energy efficient, and flexible and compact size transistor sets is a prime factor augmenting growth of the global IGBT and super junction MOSFET market. This product offers critical improvement in proficiency and better exchanging recurrence. Further, IGBT are practical while super junction MOSFETs offer exceptionally smaller plan. These variables are together driving the development of the market in the foreseeable future.

Rising demand for energy effectiveness and expanded spotlight on environmentally friendly power is foreseen to be the key main impetus for the IGBT and super junction MOSFET market. Flood in the demand of Electrical transmission effectiveness has brought about a need of upgraded power hardware plans, driving the overall market. Green IT activities across different associations to control power misfortunes and secure the climate are projected to fuel the market over the coming years.

The rapidly expanding renewable energy sector, coupled with the rising demand for electric vehicles are also adding boost to the overall growth of the market. On the other side, the presence of other compound semiconductor alternatives such as gallium-nitride or GaN, silicon carbode, and others may draw away revenues, thereby creating major barriers for the growth of the market in the coming years.

Demographically, Asia-Pacific is foreseen to stay the region with the highest revenue for IGBT super junction MOSFET market in the coming years. The presence of huge plants in nations, for example, Japan, India and China is probably going to be good for the sun based area. Improvements in car and PV inverter creation in the Asia Pacific are additionally projected to fuel reception later on. Also, rapid train network extension is assessed to bring about an appeal for power semiconductors. Expanded breeze turbine establishment in the U.S. is probably going to decidedly affect North American market. Engine drives, HEV, and modern applications are projected to be the vital sections in this regional market.


In recent years, environment compatibility, energy efficiency, flexibility and cost reduction have emerged as critical global issues across the semiconductor industry. Over the years, the electronics industry has been launching various power semiconductor solutions, such as insulated gate bipolar transistors (IGBTs) and super junction MOSFETs (metal oxide field effect transistor). IGBTs and super junction MOSFETs are used in switching applications in different end-user applications, including uninterrupted power supplies (UPS), wind turbines, PV inverters, rail tractions, electric vehicles and hybrid electric vehicles, and other industrial applications. IGBT offers faster switching and higher efficiency. As a power semiconductor device, it competes against other devices and technologies such as Gallium Nitride (GaN), MOSFETs, and Silicon Carbide (SiC) in the market. IGBTs offer the features of both bipolar transistor and MOSFETs offering both high-voltage and high input impedance. IGBTs are preferred for the applications which require high breakdown voltage and high input impedance, owing to their better conductivity modulation characteristics. IGBTs are cost effective as compared to traditional MOSFETs and are replacing traditional MOSFETs in various applications. IGBTs are preferred in motor drive applications where high current and voltage are required. Super junction MOSFETs achieve significant improvement over conventional MOSFETs by employing the principle of super junction charge-balance. Super-junction MOSFETs are manufactured with a deep-trench process technique. The market for IGBT is focusing on IGBT chip optimization, owing to the improved demand for thermal resistive, increased power output and higher density. The demand for super junction MOSFETs is high in applications that require significantly high power ratings.  The market for power electronics device is flourishing in recent years and is expected to grow further in coming years. Super junction MOSFETs and IGBT both are catering the requirement in various application markets and the demand for both would grow in coming years. 


The study titled “IGBT and Super Junction MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends, and Forecast, 2013 – 2019” aims to comparatively analyze these two power semiconductor products across various application segments and provides market insights and data about the size and growth of each segment. The application segments analyzed in this report include uninterrupted power supplies (UPS), wind turbines, photovoltaic (PV) inverters, rail traction, consumer applications, electric vehicles/hybrid electric vehicles (EV/HEV), motor drives, industrial applications, converters/adapters/chargers, lighting and others (servers, networking equipment, etc). Apart from this, the report also analyzes the discrete and module product types for both IGBT and super junction MOSFETs. The study attempts to provide a thorough coverage of the underlying technological and economic issues affecting the IGBT and super junction MOSFET business. The report provides an in-depth analysis of the global market, which has been further segmented into major geographies including North America, Europe, Asia-Pacific, and Rest of the World (RoW). The segmentation has been done to provide strategic insight into each category, enabling stakeholders across the value chain to gain considerable business intelligence. The report identifies factors driving and restraining the growth, and future business opportunities in the IGBT and super junction MOSFET market. The competitive landscape section in the report provides market share analysis of the major players in the global market in 2012. 


Besides analyzing the global IGBT and super junction MOSFET market segment-wise, the report includes profiles of major players covering their market position, business strategies and various recent developments pertaining to products and applications. The major companies covered in the report are Mitsubishi Electric Corporation (Japan), Fairchild Semiconductor International Inc. (U.S.), Infineon Technologies AG (Germany), STMicroelectronics N.V. (Switzerland), ABB Ltd. (Switzerland), Hitachi Power Semiconductor Device Ltd. (Japan), Toshiba Corporation (Japan), Vishay Intertechnology Inc (U.S.), Fuji Electric Co. Ltd. (Japan), and Semikron Inc (Germany).


The global IGBT and super junction MOSFET market is segmented as below:


Market Segmentation:


IGBT and Super Junction MOSFET Market, By Product Type

  • IGBT

    • Discrete IGBT
    • IGBT module
  • Super junction MOSFET

    • Discrete super junction MOSFET
    • Super junction MOSFET module

IGBT and Super Junction MOSFET Market, By Application

  • Residential
  • Uninterrupted power supply (UPS)
  • Wind turbines
  • Photovoltaic (PV) inverter
  • Rail traction
  • Consumer applications
  • Electric vehicles/hybrid electric vehicles (EV/HEV)
  • Motor drives
  • Industrial applications
  • Converters, adapters and chargers
  • Lighting
  • Others (servers, telecom and networking devices, etc.)

 IGBT and Super Junction MOSFET Market, By Geography

  • North America
  • Europe
  • Asia Pacific
  • Rest of the World (RoW)

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Igbt Super Junction Mosfet Market

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