+1-518-618-1030 866 - 552 - 3453 USA-Canada Toll Free

Magneto Resistive Ram (MRAM) Market - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 - 2024

Pre Book Price: $ 5216

Original Price: $ 5795

Magneto resistive random access memory (MRAM) is a new form of random access memory (RAM) technology. A metal is considered as magneto resistive if it displays small alteration in electrical resistance, when placed in a magnetic field.

Magneto resistive random access memory (MRAM) is a high capacity next generation memory that has the capability to replace all existing form of RAMs such as Dynamic random access memory (DRAM) and Static random access memory (SRAM) among others. DRAM and SRAM are both volatile memories that store data in devices such as in graphics card and servers among others;   whereas SRAM is used where speed is of primary concern, such as central processing unit (CPU) cache of computers.

Magneto Resistive Random access memory (MRAM) provides advantages over traditional RAMs as it uses magnetic charges to store each bit of data, instead of electrical power. MRAM uses the high density of DRAM, data reliability of flash or erasable programmable read-only memory (EPROM), and high speed configuration of SRAM to store more data with less battery power compared to an electronic memory. Magneto Resistive Random Access Memory (MRAM) enjoys an advantage over Flash Memory by measuring the write time in nanoseconds which is 1000 times faster than the write time of flash memory, measured in milliseconds. 

Magneto Resistive Random Access Memory (MRAM) can make technologies (such as computers, mobile devices, and others) more scalable, thus making it more adoptable for our coming generations. Hence, scaling mechanism generates demand of high capacity memories to assure storing facility of large databases and rapid assessing video by consuming less battery power. Magnetic resistance of MRAM offers advantage over electrical resistance in the field of information storage. Non-volatility characteristic of MRAM aids in retaining data and is not required to refresh repeatedly   as in traditional memories.

Magneto Resistive Random Access Memory (MRAM) market is facing challenges in terms of volume, cost structures, and integrated CMOS (complementary metal oxide semi-conductor) process. The application of MRAM is limited only for specialized purposes. Thus, economies of scale is required to lower the manufacturing cost of MRAM. Magneto Resistive Random Access Memory (MRAM) does not enjoy strong support of key players unlike parameter random access memory (PRAM), thus, it fails to act as an alternative non-volatile memory.

Magneto Resistive Random Access Memory has several advantageous characteristics such as high reading and writing power, high endurance, less power consumption. Thereby, it witness a long term growth rate in the global market.

By types, Magneto Resistive Random Access Memory is segmented into Toggle Magneto Resistive Random Access Memory, Second-gen Magneto Resistive Random Access Memory called Spin Torque Transfer Magneto Resistive Random Access Memory (STT-MRAM). Toggle Magneto Resistive Random Access Memory uses magnetic field to change electronic spin. Whereas Second-Gen MRAM switches the electronic spin by using spin-polarized current. The latter is much faster, easier, and efficient to scale-down compare to former. STT-MRAM is an advanced type of Magneto Resistive Random Access Memory device which consumes lesser power, enables higher densities, and has lower manufacturing cost compared to toggle MRAM.

By application, Magneto Resistive Random Access Memory is used for various purposes extending from factory automation to military devices such as spacecraft, missiles, and nuclear weapons among others. MRAM is also used for sensors, smart cards, mobile computing, cell phones, portable playback and recording devices, notebooks, computing, and networking. For cell phones and notebooks, MRAM acts as an attractive non-volatile memory which can replace both DRAM, and flash. Thus, MRAM is used in ICT and aerospace department.

By geography, Magneto Resistive Random Access Memory market is segmented into North America, Europe, Asia Pacific, Latin America and Middle-East & Africa.  North America dominates the magneto resistive ram market whereas Asia Pacific (such as China, Japan and South-Korea) witness strong growth due to rise in demand of MRAM.

Major players of the market are international business machines corporation (IBM) (U.S), Infineon (Germany), Freescale (U.S.A),  Toshiba (Japan) and Nippon electric company limited (NEC (Japan), NVE Corporation (U.S), Honeywell (US), Samsung (South  korea), Hewlett Packard (HP) (U.S), Integrated Device Technology (IDT) Incorporated (U.S), Everspin Technology (U.S.A) and Others. NVE Corporation gains the patent rights over ten  MRAM and also produced certain niche MRAM products.

The report offers a comprehensive evaluation of the market. It does so via in-depth qualitative insights, historical data, and verifiable projections about market size. The projections featured in the report have been derived using proven research methodologies and assumptions. By doing so, the research report serves as a repository of analysis and information for every facet of the market, including but not limited to: Regional markets, technology, types, and applications.

The study is a source of reliable data on:

  • Market segments and sub-segments
  • Market trends and dynamics
  • Supply and demand
  • Market size
  • Current trends/opportunities/challenges
  • Competitive landscape
  • Technological breakthroughs
  • Value chain and stakeholder analysis

The regional analysis covers:

  • North America (U.S. and Canada)
  • Latin America (Mexico, Brazil, Peru, Chile, and others)
  • Western Europe (Germany, U.K., France, Spain, Italy, Nordic countries, Belgium, Netherlands, and Luxembourg)
  • Eastern Europe (Poland and Russia)
  • Asia Pacific (China, India, Japan, ASEAN, Australia, and New Zealand)
  • Middle East and Africa (GCC, Southern Africa, and North Africa)

The report has been compiled through extensive primary research (through interviews, surveys, and observations of seasoned analysts) and secondary research (which entails reputable paid sources, trade journals, and industry body databases). The report also features a complete qualitative and quantitative assessment by analyzing data gathered from industry analysts and market participants across key points in the industry’s value chain.

A separate analysis of prevailing trends in the parent market, macro- and micro-economic indicators, and regulations and mandates is included under the purview of the study. By doing so, the report projects the attractiveness of each major segment over the forecast period.

Highlights of the report:

  • A complete backdrop analysis, which includes an assessment of the parent market
  • Important changes in market dynamics
  • Market segmentation up to the second or third level
  • Historical, current, and projected size of the market from the standpoint of both value and volume
  • Reporting and evaluation of recent industry developments
  • Market shares and strategies of key players
  • Emerging niche segments and regional markets
  • An objective assessment of the trajectory of the market
  • Recommendations to companies for strengthening their foothold in the market

Note: Although care has been taken to maintain the highest levels of accuracy in TMR’s reports, recent market/vendor-specific changes may take time to reflect in the analysis.

To receive discount, please click on the button below.

Please click on the button below to customize this report.

Back To Top