Published: Oct, 2016
With the maturity of products in the near future, the global next generation memory technologies market is expected to witness an influx of new players. Memory products are facing a significant challenge in replacing existing flash memories and DRAM, making internal competition among memory technologies quite high, says Transparency Market Research (TMR) in a new study. Some of the leading players in the market are Fujitsu Ltd., Micron Technology Inc., Everspin Technologies Inc., Samsung Electronics Co., and SK Hynix Inc.
The valuation of the global next generation memory technologies market was US$588.7 mn in 2015 and is anticipated to expand at a CAGR of 46.1% from 2013 to 2019, reaching a value of US$2,837.0 mn by 2019. Based on interface technology, double data rate (DDR) interface will continue to be the leading segment until 2019, holding 44.2% of the overall market value. However, due to the increasing demand for memory technologies in automotive and industrial applications, PCIe (peripheral component interconnect express) and I2C (inter integrated circuit) is anticipated to rise at a tremendous CAGR over the forecast period.
Revenue Generation of Asia Pacific to Surpass North America by 2018
Geographically, North America will be the dominant segment in terms of revenue until 2017. Due to the noteworthy growth of the automotive and electronics sector and smart cards market, Asia Pacific is expected to lead the market in the rest of the forecast period. The Rest of the World (RoW) market for next generation memory technologies will expand at an impressive CAGR of 80.9% during the same period owing to rapid growth in communications infrastructure, mobile phones, consumer electronics market, and machine-to-machine markets in emerging countries such as Brazil and South Africa.
Rising Demand for Fast and Highly Scalable Memory to Augment Growth of Market
In recent years, there has been a considerable growth in the demand for fast, highly scalable, and low-power memories with a lower cost per bit. “Current leakage is a major issue with the present generation of memories when scaled at 65nm and beyond. Moreover, these memory structures offer only a temporary solution,” says the author of the report. This factor is triggering the need for next generation memory technologies. Another factor that is compelling market players to shift to the development of next generation memory technologies is the high volatility in prices of existing memories. Newer technologies are leading to sustainable profit margins, thereby driving the global market.
High Cost and Increase in Time-to-market Owing to Design Process Standardization to Restrain Market’s Growth
The requirement of design processes to be standardized and economy of scale to be achieved in order to compete with older memories such as DRAM and flash is leading to high cost of design. These requirements further increase the time-to-market for next generation memory technologies. Moreover, these emerging technologies still lag behind NAND in terms of design density and are thus likely to face a stiff challenge in replacing NAND flash even if they become denser in design over the next few years. These factors, collectively, are hampering the growth of the global next generation memory technologies market.
However, rapid development in the industrial sector has created the increasing need for memory solutions that are are universal, highly scalable, stand reasonably well on all performance parameters, and deliver characteristics of all the existing memory types. This factor is expected to bolster the growth of the global next generation memory technologies market in the coming years.
The information presented in this review is based on a Transparency Market Research report, titled,“Next Generation Memory Technologies Market - Global Industry Analysis, Market Size, Share, Growth, Trends and Forecast 2013 - 2019.”
The global next generation memory technologies market is segmented as below:
By product type
- Non-volatile next generation memory technologies
- ReRAM (Resistive random-access memory)
- PCM (Phase-change memory)
- MRAM (Magneto-resistive random-access memory)
- FeRAM (Ferroelectric RAM)
- Others (Racetrack, CBRAM, etc.)
- Volatile next generation memory technologies
By interface type
- PCIe and I2C
- Mobile phones
- Cache memory and enterprise storage
- Industrial and automotive
- Mass storage
- Embedded MCU and smart card
- North America
- Asia Pacific
- Rest of the World (RoW)
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