Owing to characteristics such as high resistance to temperature, low power consumption, better thermal stability, high breakdown voltage, and high electron mobility, GaN semiconductors are widely acknowledged as a green technology across numerous industries. GaN semiconductor devices are being heavily used in light emitting diodes (LEDs), power electronics, and radio frequency (RF) amplifiers owing to their unique properties. With advancement in the GaN technology and reduction in costs, the use of GaN semiconductors is expected to substantially rise across an increasing number of commercial application areas in the near future.
Transparency Market Research pegs the growth opportunity of the global GaN semiconductor devices at US$3,438.4 mn by 2024. The market, which had a valuation of US$870.9 mn in 2015, is expected to exhibit an exponential CAGR of 17.0% over the period between 2016 and 2024 to achieve this feat.
Defense and Aerospace Industries Continue to Dominate; Healthcare Industry to Present Novel Growth Opportunities
Of the key end-use industries utilizing GaN semiconductor devices, applications across the defense and aerospace industry are the dominant contributor to the overall market revenue presently. In 2015, this end-use segment accounted for a share of more than 40% of the overall market. GaN-based transistors find enormous demand across a variety of applications in the defense industry. Applications such as electronic warfare, radar communication, and improvised explosive device (IED) jammers are expected to lead to a sustainable rise in demand for GaN semiconductor devices in the sector in the next few years as well. Consistently rising defense budgets across developed and developing economies will help fortify the trend.
New application areas and potential markets for the usage of GaN semiconductors are being explored across the globe, which is expected to grant momentum to the market in the near future. The medical industry, for instance, is expected to emerge as an eminent end-user of the market in the near future. Recent discoveries, such as the confirmation that GaN can be safely used in biomedical implants, will aid market’s development in this direction.
North America and Europe to Remain Most Influential Regional Markets
The market for GaN semiconductor devices in North America presently commands the dominant position in the global market. In terms of revenue, the North America GaN semiconductor devices market accounted for a share of 30% of the global market in 2015. Over the next few years as well, the North America market is expected to expand at an excellent pace, driven primarily by the rising use of GaN-based transistors in the military and defense sectors in the region. Moreover, the rising demand for LEDs in consumer electronic products such as smartphones, gaming devices, laptops, and has further boosted the demand for GaN semiconductor devices in the region.
Trailing the North America market, the Europe market for GaN semiconductor devices is also expected to witness strong growth in the years to come. The European Space Agency (ESA) has identified GaN as a ‘key enabling technology’ for space and has founded the GREAT2 (GaN reliability enhancement and technology transfer) initiative to focus on the manufacture of efficient GaN devices for several space applications in the future years. Moreover, the GaN semiconductor devices market is also expected to benefit from the increased use of GaN high performance amplifiers in the region’s telecommunications industry. The Asia Pacific GaN semiconductor devices market is chiefly driven by the flourishing consumer electronics industry and the rising demand for affordable mobile devices.
The global GaN semiconductor devices market features a largely consolidated competitive landscape, with the top four vendors accounting for a share of over 65% of the overall market in 2015. Efficient Power Conversion Corporation, NXP Semiconductors N.V., GaN Systems Inc., and Cree Inc. are these top four companies in the market. Other key vendors in the market are Mersen S.A., Avogy, Inc., Fujitsu Limited, Toshiba Corporation, and Renesas Electronics Corporation.
As compared to gallium arsenide (GaAS) and silicon carbide (SiC), Gallium nitride (GaN) is a new technology and is a wide band gap semiconductor material. GaN semiconductor devices provide a competitive advantage in terms of thermal performance, efficiency, weight and size. GaN is anticipated to be the next generation power semiconductor and thus different countries are indulged in developing widespread applications of GaN semiconductors. The wide band gap semiconductor technology has matured rapidly over several years. In fact, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) have been available as commercial off-the-shelf devices since 2005. Recently, the IMEC (Interuniversity Microelectronics Center) in Europe organized a “GaN-on-Si research program” in order to produce an 8 inch GaN-on-Si wafer. However, fully-fledged application of GaN semiconductor devices is still in the nascent stage as compared to silicon semiconductor devices that have been around for more than a decade.
The GaN semiconductors devices market is primarily being driven by factors such as advancement in technology coupled with the expansion in the application areas for GaN based devices. There has been a rapid advancement in the GaN technology as a result of which various companies are coming up with new innovative products that are cost-effective and have better design and performance. Moreover, in order to address the growing demand for high power and high temperature applications there has been an increase in the usage of GaN semiconductor devices. Compared to Silicon (Si) and Gallium Arsenide (GaAs), gallium nitride is a robust technology and possesses better performance characteristics. GaN semiconductor devices offer high breakdown voltages, saturation velocity, high electron mobility and high thermal conductivity among others. This has enabled the implementation of GaN on a wide basis high frequency RF devices and LEDs. These factors in combination are expected to positively impact the growth of the GaN semiconductor devices globally.
However one of the major restraints of the GaN semiconductor devices market is the high production cost of pure Gallium nitride as compared to silicon carbide, which has been a dominant semiconductor material for high voltage power electronics for a decade. The various costs involved in the production of GaN devices include cost of substrate, fabrication, packaging, support electronics and development. Thus, high cost is one of the major challenges in the commercialization of GaN based devices. Though producing GaN in large volumes can help overcome these issues, currently, there is no widespread adopted method for growing GaN in bulk due to high operating pressures and temperatures, low material quality and limited scalability.
The competitive profiling of the key players in the global Gan semiconductor devices market and their market shares across four regions which include North America, Europe, Asia Pacific and Rest of the World (RoW) have been exhaustively covered under the purview of the study. Moreover, the distinct business strategies that have been adopted by the major players in the market have also been included in the report.
A comprehensive analysis of market dynamics, which include the market drivers, restraints and opportunities, is included under the scope of the report. Market dynamics are the distinctive factors that influence the growth of the specific market and therefore help to study the current trends in the global market. Additionally, list of top GaN based IC manufacturers have also been included under the scope of the research. Thus, this report provides an inclusive study of the global GaN semiconductor devices market and also provides the forecast of the market for the period from 2016-2024.
Some of the major players in the market are: Mersen S.A., Avogy, Inc., Fujitsu Limited, GaN Systems Inc., Cree Inc., NXP Semiconductors N.V., Renesas Electronics Corporation, Toshiba Corporation, Everlight Electronics Co. and Efficient Power Conversion Corporation
The global GaN semiconductor devices market has been segmented into:
Global GaN semiconductor devices market, by Products
- Power Semiconductors
- GaN Radio Frequency Devices
Global GaN semiconductor devices market, by Wafer Size: The market is broadly segmented on the basis of wafer size into:
- 2 inch
- 4 inch
- 6 inch
- 8 inch
Global GaN semiconductor devices market, by Application: The market is broadly segmented on the basis of application into:
- Information and Communication Technology
- Consumer Electronics
- Defense and Aerospace
Global GaN semiconductor devices market, by Geography: The market is broadly segmented on the basis of geography into:
- North America
- Asia Pacific
- Rest of the World