Atomic layer deposition (ALD) and chemical vapor deposition (CVD) are process undertaken to produce high quality and high performance materials. The process is majorly applied to produce thin films in the semiconductor industry. The market is expected to grow during the forecast period because of their low thermal stability properties.
The high-k and ALD/CVD metal precursors are experiencing demand due to ongoing research and development in this area which in return is creating a need for copper metallization procedures. In addition, the rising demand for thin films in the semiconductor industry is also expected to drive the market for high-k and ALD/CVD metal precursors market. Furthermore, the ALD/CVD process involves the use of noble metals such as palladium, rhodium, ruthenium, platinum and iridium which are the drivers for researches being conducted in this field. Moreover, the modern semiconductors devices consists of insulators and hi dielectric constants. The development of these components involves the use of thin films. This in return is fueling the growth in this market. Moreover, the high-k materials are extensively used in Light Emitting Diodes (LED) technology. The growth of LED in the lighting industry is expected to spur the market for high-k and ALD/CVD metal precursors market.
The market is facing restraint in the form of impurity levels while process is conducted to create ALD/CVD metal precursors. In addition, the atomic layer deposition process is only limited to few noble metals such as rhodium, palladium and platinum among others. These metals are rare and expensive. These factors are expected to hinder the growth in the market. The high-k and ALD/CVD metal precursors are also used in the nanotechnology. The evolution of nanotechnology is expected to create an opportunity for this market.
The high-k and ALD/CVD metal precursors market can be segmented in two types: by precursor technology and regions. By precursor technology, the market can be segregated into interconnect, capacitor and high-k gates. The high-k precursors are extensively used for gates and capacitors. The metal precursors are mainly used for electrode and interconnect layer. The high-k dielectric layers are more prevalent in some of the electrical components such as DRAMs, organic thin film transistors OLEDs, Metal-Insulator-Metal (MIM) capacitors and non-volatile memories. Moreover, the technological advancement in this field is fueling the growth in this market.
In terms of market share Asia Pacific region is leading and expected to remain largest during the forecast period. The region’s growth is attributed to the large vendors for electronic equipment in countries like China and Japan. Moreover, the increasing demand for semiconductors in this region is also expected to drive the growth for this market. North America is the second largest region in terms of market share. Moreover, this region includes countries like the US and Canada who are the early adapters of technology. The demand for nanotechnology in this region is also favoring the growth for this market.
Some of the key players in the high-k and ALD/CVD metal precursors include Dow Chemical, JSR Corporation, Adeka Corporation, Dynamic Network Factory Inc, NANMAT and Samsung Electronics among others.
This research report analyzes this market on the basis of its market segments, major geographies, and current market trends. Geographies analyzed under this research report include
- North America
- Asia Pacific
- Middle East and Africa
- Latin America
This report provides comprehensive analysis of
- Market growth drivers
- Factors limiting market growth
- Current market trends
- Market structure
- Market projections for upcoming years
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